Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl2
| Author | |
|---|---|
| Year of Publication |
2000
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| Date Published |
Jan-01-2000
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| Journal Title |
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures
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| Volume |
18
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| Start Page or Article ID |
191
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| ISSN Number |
0734211X
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| DOI | |
| Download citation | |
| JILA PI | |
Journal Article
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| Publication Status |