TY - JOUR
AU - N. Materer
AU - R. Goodman
AU - Stephen Leone
BT - Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures
DA - Jan-01-2000
DO - 10.1116/1.591171
PY - 2000
EP - 191
T2 - Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures
TI - Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl2
VL - 18
SN - 0734211X
ER -