Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001)
| Author | |
| Year of Publication |
2002
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| Date Published |
Jan-06-2002
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| Journal Title |
Journal of Crystal Growth
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| Volume |
241
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| Start Page or Article ID (correct) |
271-276
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| ISSN Number |
00220248
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| DOI | |
| Download citation | |
| JILA PI | |
Journal Article
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| Publication Status |