EUV-based Semiconductor Metrology for Dimensional and Materials Scaling

Abstract: Dimensional and materials scaling are two key drivers for advancing computational capabilities beyond the conventional scaling trends of the last several decades. Future device metrology solutions must be developed now without clarity as to which combinations of proposed architecture(s) and novel materials will prove best suited for integration into high-volume manufacturing. This presentation briefly reviews these possible pairings and the near-term and long-term metrology challenges as identified in the IEEE International Roadmap for Devices and Systems. As device dimensions further approach near-atomic and atomic scales, many of the several existing metrology techniques will face new tests, illustrated here using examples and solutions from our optics-based semiconductor metrology research. New solutions are required; we are starting a multi-year effort to harness extreme-ultraviolet radiation to measure nanoscale feature sizes quickly and non-destructively in advanced integrated circuits (ICs). This project will develop novel approaches to utilize EUV radiation in the 5 nm to 150 nm spectral range, for chemical and dimensional characterization of leading-edge technologies over the next decade. Still, no single metrology technique can address all issues faced in modern process control and inspection; thus we address complementary techniques across semiconductor metrology are required to address dimensional and materials scaling.